Pulsed laser ablation has been utilized in our laboratory to deposit thin films of semiconducting oxides such as indium oxide and tin oxide. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (lambda = 532 nm) on silicon (100) substrates. A comparison has been performed, among indium oxide, tin oxide, and multilayers of indium and tin oxides, to evaluate their use as NO gas sensors. The influence of physical parameters, such as substrate temperature and laser fluence, on the velocity response of the films and on their resistance variation, has been investigated. The deposited films have been characterized by X-ray diffraction (XRD) and electric resistance measurements.