Experimental results on laser solid-phase doping of Si, GaAs and InP are presented. Using kW CO2 laser, we fabricated ultra-shallow p-n junctions and Ohmic contacts with these semiconductors. The impurity distribution into the depth of the doped layers has been studied through the Auger electron spectroscopy (AES). The zero-bias resistance of formed GaAs p-n junctions was similar to 10(10) Omega and a typical resistance of nonrectifying contacts with GaAs and InP was 5 . 10(-7) Omega . cm(2) and 5 . 10(-5) Omega . cm(2), respectively.