Applied Surface Science, Vol.157, No.3, 123-128, 2000
Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organic chemical vapor deposition
Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.