Exponential-like trends were observed between the implanted Cs concentration and the secondary ion intensities of Si- and O- resulting from 1 keV Cs+ primary ion ultra shallow depth profile analysis of Si bearing 0.9 and 6 nm SiO2 films. The Cs concentration as a function of Cs+ flux was derived via X-ray photoelectron spectroscopy (XPS) of the elemental composition present within the sputtered craters that were terminated at incrementally shorter Cs+ sputtering times across the secondary ion transient region. The variation in the secondary ion signals with Cs content is consistent with a dipole layer formation mechanism. Derivation of analytical functions describing this Cs enhancement effect allows for the removal of the transient effects observed in the Si- and O- secondary ion depth profiles.