Titanium nitride was grown epitaxially on MgO(001) by a pulsed laser deposition (PLD) method, and the oscillations of reflection high energy electron diffraction (RHEED) for this system were observed for the first time. The RHEED patterns and atomic force microscope (AFM) analysis revealed the two-dimensional growth of highly flat TiN films. The high-resolution reciprocal space mapping of X-ray diffraction of the TiN film showed that the lattice dimensions of the TST shrunk along the plane parallel to the surface of the MgO(001) substrate by 0.6% with no structural relaxation and no mosaic disorder, demonstrating the deposition of the high-quality epitaxial film.