화학공학소재연구정보센터
Applied Surface Science, Vol.161, No.1-2, 240-248, 2000
CrSi2 films synthesized by high current Cr ion implantation and their physical properties
Continuous and plain n-type CrSi2, semiconductor layers featuring a relatively sharp interface with the underneath Si were synthesized by a single-step metal vapor vacuum are (MEVVA) ion implantation and the synthesizing process was reproducible. Hall measurements showed that the electrical parameters changed with the formation temperature. At an optimal formation temperature of 260 degrees C, a high room temperature (RT) Hall mobility of 1085 cm(2) V-1 s(-1) was obtained. Besides. the bandgap values of 0.7 and 0.83 eV were observed for the CrSi2, layers formed under different experimental conditions. The mechanism responsible for the formation of CrSi2, layers on Si wafers is also discussed.