1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface

Enriquez H; Derycke V; Aristov VY; Soukiassian P; Le Lay G; di Cioccio L; Cricenti A; Croti C; Ferrari L; Perfetti P

Applied Surface Science, Vol.162, 559-564, 2000

DOI10.1016/S0169-4332(00)00250-6 Export Citation

1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface

Enriquez H, Derycke V, Aristov VY, Soukiassian P, Le Lay G, di Cioccio L, Cricenti A, Croti C, Ferrari L, Perfetti P

We investigate the temperature-induced phase transition on Si-terminated beta-silicon carbide (SiC)(100) surface using scanning tunneling microscopy (STM) and spectroscopy, and valence band and core level photoemission spectroscopies using synchrotron radiation, Above 700 K, the 2 x 1 surface exhibits metallization with a non-Fermi liquid power law shape spectral response near the Fermi level. This suggests a surface having one-dimensional (1D) metallicity related to the Si-Si dimers rows constituting the topmost atomic layer. This behavior can be related to the Luttinger liquid model.

Keywords:1D;c(4 x 2) to 2 x 1 transition;beta-SiC(100) surface