We present SiGe/Si (001) heteroepitaxy performed in a commercial Chemical Vapor Deposition (CVD) cold-wall vertical reactor using SiH4 and GeH4 as precursor gases. This versatile machine operates in a wide range of temperature and pressure, allowing both the Ultra High Vacuum (UHV) and the Low Pressure (LP)-CVD. The growth of Si0.71Ge0.29/Si strained superlattices (SLs) at 600 degrees C and Si0.75Ge0.25/Si relaxed pseudo-substrates at 700 degrees C is demonstrated using UHV and LP, respectively, and their structural properties are discussed. Finally, results of a first attempt of growing an undoped resonant tunneling like heterostructure onto a Si0.75Ge0.25 virtual substrate (VS) are reported.