Applied Surface Science, Vol.166, No.1-4, 113-118, 2000
Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi(111) layers with Si(111) root 3 X root 3/30 LEED pattern
In situ Hall measurements, ex situ Hall and Seebeck coefficient temperature measurements of very thin (0.3-2.4 nm) CrSi(111)epitaxial layers with Si(111)root 3 X root 3/30 degrees LEED pattern are presented. The sheet p-type conductivity in CrSi(111) layers was observed from the chromium thicknesses of 0.9 nm. Chromium monosilicide layer (2.4 nm) displayed the metallic properties at room temperature by optical spectroscopy data. Sheet hole concentration was nearly constant in the temperature range of 300-500 K, but activated at high temperatures.