In this contribution, an overview of the research work in our group on the GaAs(112), (113) and (114) surfaces is presented. Samples were prepared by molecular beam epitaxy (MBE) and analyzed in situ by low-energy electron diffraction (LEED), core level spectroscopy and scanning tunneling microscopy (STM). The GaAs(112)A surface is unstable and decomposes into five facets of the orientations {110}, (111) and {124}. Real space images reveal that the facets form depressions whose horizontal cross-section is an irregular pentagon. For the GaAs(113)A surface, our results support the (8 x 1) reconstruction proposed by Wassermeier et al. On the GaAs(114)A surface a c(2 x 2) reconstruction was found. A structure model based on the GaAs(001)-(2 x 4)alpha reconstruction is in agreement with all our results.