Applied Surface Science, Vol.166, No.1-4, 309-312, 2000
Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, which are reproduced using ab initio calculations.