Applied Surface Science, Vol.168, No.1-4, 57-60, 2000
Photo-assisted MOCVD of copper using Cu(hfa)(COD) as precursor
Cu thin films were deposited in the temperature range 100-180 degreesC using the title precursor by photo-MOCVD. The ultraviolet (UV) photons facilitate a clean removal of the ligands. Consequently, the growth rate is slightly increased under irradiation and the morphology and the film resistivity is improved.