Pulsed laser deposition (PLD) method of thin films fabrication requires appropriate choice of technological parameters. These are: substrate temperature, the energy density of the laser radiation, its wavelength, the pulse duration, the distance target-substrate, etc. Exact analysis of the influence of these parameters on the layer growth is too difficult to be performed. Therefore, the computer simulation of the layer growth is very promising method for determining the growth parameters. Tn the paper, the growth of Si and CdTe films on the (0 0 1) substrate surface was simulated by the Monte Carlo method. The model for layer growth included: surface diffusion, adsorption and desorption of adatoms, kinetic energy distribution of atoms or ions in the plasma plume and its space and time structure, Results obtained have been compared with some experimental data.