beta -FeSi2 layers were grown on Si(1 1 1) substrates by Fe deposition and simultaneous reaction with Si under the presence of an Sb flux. High quality epitaxial layers were obtained at the substrate temperature of 650 degreesC with smooth interface between the reactive resultant beta -FeSi2 layers and Si substrates, in comparison to the layers grown by conventional reactive deposition epitaxy (RDE). Sb/Fe flux ratio dependence of the structural property was examined using X-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Photoluminescence spectra were also measured at low temperature.