화학공학소재연구정보센터
Applied Surface Science, Vol.169, 371-374, 2001
Growth of Nb thin films on SiO2
Nb thin films have been prepared by electron beam evaporation under ultrahigh vacuum conditions on fused silica substrates at various temperatures, and their structural and morphological evolutions have been investigated using X-ray diffraction and atomic force microscopy. The crystallographic texture of the Nb films is found to depend on the growth temperature. At room temperature, the [110] texture is dominant. However, at 200 degreesC, the [310] oriented growth is favored, co-existing with [110] and [200] oriented grains. At 400-600 degreesC, a completely [110] textured film is formed. At even higher temperature (800 degreesC), a complex texture of [110] (dominant), [200] and [310] is observed again. It is also found that the single [110] textured Nb films have smooth surfaces, and the complex textured Nb films have rough surfaces.