Hexagonal boron nitride (h-BN) has a low friction coefficient and weak surface attractive force similar to graphite. Furthermore, while graphite is conductive, BN is a good insulator. These properties make it suitable for application like lubricating coating or as an insulator/buffer layer in electronic devices. The synthesize of h-BN layer by surface segregation phenomena and mechanical properties of the h-BN surface segregated on Cu substrate have been investigated. During in situ annealing, the surface segregation of BN occurred on Cu/BN film deposited by deposition process with a rf magnetron cosputtering system. Anger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) analysis showed that though the h-BN layer synthesized was not covered whole area of substrate but the h-BN layers partially covered substrate. And the concentration of oxygen on the surface after exposure in air is decreased with increase of BN concentration. The topography of atomic forces microscopy (AFM) showed that h-BN phases surface segregated are discontinuous droplet shape. The force curves of AFM and friction force of lateral force microscopy (LFM) showed that the h-BN droplet surface segregated have very weak attractive force and low friction coefficient equal to h-BN sintered plate.