In the future large-scale integrated circuits, Al metal connection should be replaced because of the large electromigration and the lower electrical conductivity. In this study, Cu metal films were deposited at room temperature on glass substrates by using ArF excimer laser, and the film properties have been investigated. The source material was Cu(hfac)(TMVS). In XPS analyses, the peaks of C, F and O were not found in the films. The resistivity of the samples was decreased sharply after the post-annealing in nitrogen atmosphere.