Ferroelectric thin films have been widely expected for nonvolatile ferroelectric random access memory (FeRAM) application. Production process of depositing Pb(Zr,Ti)O-3 (PZT) thin films has been developed by using RF-magnetron sputtering method. It is very important to study stability of Pb content in the PZT films, uniformity of film thickness on large (8 in.) substrate and maintenance periodicity of the sputtering chamber (coping with particles) for the production. The stability for 1000 wafer deposition and the thickness uniformity of 5% were realized. Improving the sputtering equipment, the shield life until particle-break-out became long.