화학공학소재연구정보센터
Applied Surface Science, Vol.172, No.3-4, 200-206, 2001
On the growth mechanism of UV laser deposited a-C : H from CH2I2 at room temperature
Hydrogenated amorphous carbon films have been deposited on tungsten and quartz substrates at room temperature by photolytic dissociation of CH2I2. An Ar+ cw laser operating at 350 nm was used as the excitation source. The laser beam was focused parallel to the substrate surface. The deposition process was investigated as a function of laser power and total pressure. The carbon films were analysed by micro-Raman spectroscopy, IR spectroscopy, atomic force microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The growth mechanism is discussed from results and analysis.