We have developed a new method which enables us to atomically control the height and the periodicity of the step distribution on vicinal SrTiO3 (1 0 0) substrates. This method also enables us to obtain precipitate-free epitaxy of oxides. Practically thick YBa2Cu3O7-delta films grown on such terraced vicinal substrates exhibited a regular epitaxial growth, and smooth and precipitate-free surfaces of practical device sizes.