A method for determination of doping concentration profiles of GaAs multilayer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated I-TO/I-LO intensities determine the doping concentration in these points for values above 3 x 10(16) cm(-3). The results are compared with electrochemical capacitance-voltage technique and secondary ion mass spectrometry, Some specific problems are discussed.