Insulating SiO2 layer was deposited on 6H-SiC by chemical vapor deposition (CVD) method using tetraethyl orthosilicate (TEOS; Si(OC2H5)(4)) as a source material. The substrate was research grade n-type 6H-SiC. The SiO2 film was deposited at 750 degreesC. Metal-insulator-semiconductor (MIS) capacitor was prepared to evaluate the interface properties between SiC and SiO2. The sample showed capacitance-voltage curves with hysteresis loops and deep depletion characteristics. Interface-state density near mid-gap was 5 x 10(11) cm(-2) eV(-1), and was lower than that for the sample prepared on same substrate using thermally grown oxide as an insulating layer. Post-deposition annealing at 1000 degreesC in Wet O-2 atmosphere resulted in increase in interface-state density.