Applied Surface Science, Vol.184, No.1-4, 419-424, 2001
Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates
Sublimation epitaxy in a vacuum (SEV) has been used to obtain p-3C-SiC/n-6H-SiC heteroepitaxial structures. Results of a study of epilayers (X-ray diffraction analysis, scanning electron microscopy involving secondary electrons and electron beam induced current modes) and diode structures on their base (I-V and C-V characteristics, electroluininescence spectra, DLTS) are presented. Band discontinuities are determined and a band diagram of the p-3C-SiC/n-6H-SiC heterostructure is constructed.