Nuclear detector radiation hardness is very important for key experiments in high-energy physics, where the irradiation fluence of relativistic particles can be as high as 10(15) cm(-2). In this work, we investigate the radiation hardness of SiC Schottky diode detectors phi 600 mum, obtained by magnetron sputtering of Ni on surface of 6H-SiC films, grown by sublimation epitaxy in vacuum. Irradiation has been performed using 1 GeV protons, Detector characteristics were tested by a-particles from a Cm-244 source (5.79 MeV). Investigation of the detector parameters (diffusion length, radiation- induced defects concentration, thickness of the space charge region), before and after irradiation shows that, up to a fluence of 3 x 10(14) cm(-2), the device degradation is at a beginning stage.