Applied Surface Science, Vol.184, No.1-4, 460-465, 2001
Electrophysical and photoelectrical properties of UV-range injection structures made of silicon carbide
The current-voltage characteristics (CVCs), photosensitivity, diffusion, generation-recombination, low frequency noises and detectivity of the visible range 6H-SiC p(+)nn(+)-double-injection (DI) photodetectors are studied. The agreement between theoretical results and experimental data is shown.