Silicon carbide presents electrical properties suitable for many applications especially for high voltage devices. 6H-SiC P+NN+ structures have been fabricated following ISE software simulations in order to block voltages as high as 1.5 kV. In particular, these diodes are realized by surrounding the emitter by a p-type region called junction termination extension (JTE). Electrical characterizations under reverse bias at, room temperature and in various environments (air, silicone oil) show a premature breakdown for the protected diodes. This breakdown is localized at the emitter periphery. Optical beam induced current (OBIC) measurements show a peak of photocurrent at the junction edge, indicating the presence of a high electric field. These results show a protection efficiency of 60% of the JTE. An electrical activation of the aluminum dopants implanted in the JTE around 30% is derived from the analysis of the presented results.