Tantalum pentoxide (Ta2O5) thin films with different thicknesses of around 100, 170 and 660 Angstrom have been grown on 4-in. p-type (100) Si wafers by photo-induced chemical vapor deposition and then annealed at low temperature (350 degreesC) using 172 nm excimer lamps. High film uniformity across the wafers with a thickness variation of not more than +/-2.5% was readily 2 achieved for all the as-deposited films. Improved leak-age current densities down to 1.2 x 10(-8) A/cm(2) at an electric field of 1 MV/cm were obtained in 100 Angstrom thick films upon annealing. The optimum annealing conditions were found to vary among these films with an annealing time of similar to5 min being most effective for 100 Angstrom thick layers, while 20 min or more was required for films thicker than 660 Angstrom. (C) 2002 Elsevier Science B.V. All rights reserved.