화학공학소재연구정보센터
Applied Surface Science, Vol.188, No.1-2, 85-89, 2002
Strain effect on interatomic distances in InGaAs/InP epitaxial layers
Using X-ray absorption fine structure spectroscopy (XAFS) with synchrotron radiation, we have performed an in-depth study on the strain-induced deformations in the first three coordination shells of (InGa)As epilayers deposited on InP(001). In order to obtain information on the second and third coordination shells, we have exploited the directional sensitivity of XAFS. All the experimental results can be reproduced by applying the macroscopic strain matrix to the local scale, independent of the chemical nature of the interatomic correlations. (C) 2002 Elsevier Science B.V. All rights reserved.