Using coaxial impact collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(111) root3 x root3-Sn and hydrogen-terminated Si(111) surfaces at room temperature. Sn formed crystalline film with beta-Sn structure on Si(111) root3 x root3-Sn surface, but on the hydrogen-terminated Si(111) surface, the epitaxial growth of Sn thin film was disrupted, and Sn grew as a polycrystalline film. The growth orientational relationship of the Sn film grown on Si(111) root3 x root3-Sn slaface was found to be Sn(100)<010> // Si(111)<0 (1) over bar1>. in the works, we found that interface structure plays a decisive role for the growth mode, crystallinity, and growth orientation of the growth of thin film. (C) 2002 Elsevier Science B.V. All rights reserved.