Applied Surface Science, Vol.190, No.1-4, 302-306, 2002
Acceptor- and donor-like interfacial states at ZnSe/GaAs heterovalent interfaces
The properties of ZnSe/GaAs interface with acceptor-like or donor-like state have been studied. The electric field and potential profile at the interface with donor-like or acceptor-like state has been calculated by solving Poisson equation, and been detected by photo-voltage measurement. The photocurrent measurement shows different behaviors in these two kinds of samples. (C) 2002 Elsevier Science B.V. All rights reserved.