Atomic layer deposition of titanium dioxide thin films from TiI4 and H2O was investigated. The method allowed self-limited growth of titanium dioxide (TiO2) films with anatase structure on Si(1 0 0) and amorphous SiO2 substrates at temperatures 135-375 degreesC provided that sufficient H2O doses were used. Rutile films were obtained at 445 degreesC. The growth rate increased with substrate temperature and ranged from 0.07 to 0.18 nm per cycle. On alpha-Al2O3(0 1 2) substrates, epitaxial growth of rutile was observed at 445 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.