Ti-N, Ti-C-N, and Ti-Si-N coating systems obtained by atmospheric pressure chemical vapor deposition (APCVD) with TiCl4, C2H2 or SiCl4, and NH3 as reactants have been examined at 650-800 degreesC in this study. Low pressure CVD (LPCVD) has been applied for deposition by the TiCl4-NH3 System instead of APCVD. The CH, addition to Ti-N did not change the growth rate, coating composition, crystal structure, and hardness, but only changed its microstructure. The SiCl4 addition showed a strong effect on the Ti-N properties. The SiCl4 addition obviously enhanced growth rate, changed crystal structure, incorporated Si into coatings, increased the hardness, and severely decreased the grain size to a nano-scale. (C) 2002 Elsevier Science B.V. All rights reserved.