Hydrogen ion diffusion in silicon nitride thin film is of significant interest because of its importance in barrier, sensor and catalytic coating applications. In this study, a novel method based on potential-pH response measurement was used to determine hydrogen ion diffusion in silicon nitride thin films. Hydrogen ion diffusion coefficient in silicon nitride films obtained from this method was 1 x 10(-19) cm(2)/S. A potential-pH response drift was observed and is believed to be due to the presence of a hydrated layer affecting the hydrogen ion diffusion onto the nitride film of the Si3N4-gate hydrogen ion-sensitive field effect transistors (ISFETs). The unique feature of the potential-pH response method is its relatively simple experimental procedure, which eliminates complications arising from surface-related effects and/or presence of hydrogen traps in membrane, such as those found in the conventional permeation method. The method also offers a considerable test time reduction, with the experiment being completed in 10 h as compared to the conventional electrochemical permeation method which takes as long as 5 days. (C) 2002 Elsevier Science B.V. All rights reserved.