Applied Surface Science, Vol.203, 126-129, 2003
Effect of the projectile parameters on the charge state formation process in solid sputtering
An effect of atomic and molecular projectile parameters on the charge state formation process in silicon sputtering has been studied. It was found that the electronic subsystem excitation in a subsurface region of silicon depends on projectile parameters and it affects the ionization probability P+ of sputtered atoms. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords:atomic and molecular ion-solid interaction;ionization probability;secondary ion mass spectrometry;silicon sputtering;kinetic energy spectra