화학공학소재연구정보센터
Applied Surface Science, Vol.203, 318-322, 2003
Six months repeatability of D-SIMS depth profile using an ultra-low-energy probe
The use of ultra-low-energy SIMS for characterizing the shallow implants, such as boron and arsenic, is now widely employed. This article investigates the repeatability of SIMS analysis in shallow depth profile during a 6-month period. Using ultra-low-energy O-2+ primary ion beams, the delta-doped B sample (four layers, 5.3 nm/cycle) is analyzed using the same conditions. Our results show that the variance of secondary ion intensity (Si-30(+)), sputter rate and the measured doses in 6-month period is within 5.0, 2.5 and 3.5% relative standard density (RSD) respectively. (C) 2002 Elsevier Science B.V All rights reserved.