Both time-of-flight secondary ion mass spectrometry (TOF-SIMS) and total reflection X-ray fluorescence spectroscopy (TXRF) are widely used tools in the semiconductor industry. They are variously used to support R&D, product development, production, quality control and failure analysis. With increasing demands for cleanliness and contamination control in both the semiconductor and compound semiconductor industries, enhanced sensitivity and capabilities are required from existing analytical techniques. This paper will detail the cross correlation of TOF-SIMS and TXRF for the analysis of trace elemental contaminants on both Si and GaAs wafers. Close agreement will be demonstrated between both techniques. Additionally, the quantitative mapping-of Cu and Zn on GaAs using TOF-SIMS will be demonstrated. (C) 2002 Elsevier Science B.V. All rights reserved.