We have studied the growth of the Zn1-xMnxTe film on the GaAs(1 0 0) substrate by use of hot-wall epitaxy (HWE) system. The growth rate is rather slow and the epitaxial Zn1-xMnxTe films with thickness of about 230 nm are obtained after 6 h deposition. Mn composition can be easily controlled in the range of x = 0-0.33 by changing the Mn source temperature (650-680 degreesC). It, however, is found that the structural quality of the films degrades with increasing Mn composition. Obtained Zn1-xMnxTe films showed photoluminescence originating in Mn2+ ions. (C) 2003 Elsevier Science B.V. All rights reserved.