The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 degreesC. From the deformation of artificially made tables after epitaxy, it is shown that the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (T-g < 400 degreesC). This indicated that kink density was high in [1 1 0] direction on InP(0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high. (C) 2003 Elsevier Science B.V. All rights reserved.