The growth and structural evolution of the carbon nitride (CNx) film, deposited by rf magnetron sputtering in Ar/N-2 discharge, were studied. The CNx (0.23 less than or equal to x less than or equal to 0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250 W. Simultaneously, Ar/N-2 gas ratio was varied from 0 to 18 with total pressure kept at 6.6 x 10(-1) Pa. The composition, structure, and chemical bonding configuration of the CNx films were found to be strongly dependent on deposition parameters (rf power and Ar/N-2 gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp(3)/sp(2) bond ratio) was established. (C) 2003 Elsevier Science B.V. All rights reserved.