In order to produce dome-shaped Ge dots with small size and high density, C submonolayers (C-SMLs) were incorporated at the interface between Ge wetting layers and Ge dots. The C atoms are considered to induce a local strain field by forming Ge-C bonding. Such strain field enhanced dome formation even at low temperature (<500 degreesC). Optimization of experimental conditions enabled precise control of the Ge dome size in the range of 30-40 nm with the density of 10(10) cm(-2). The Ge domes thus prepared exhibited intensive photoluminescence (PL) compared to those prepared by a conventional self-assembling technique. (C) 2003 Elsevier Science B.V. All rights reserved.