Applied Surface Science, Vol.216, No.1-4, 490-496, 2003
Theoretical study on stable structures and diffusion mechanisms of B in SiO2
We present first-principle total-energy calculations that clarify stable structures of B and mechanisms of B diffusion in SiO2. We find that a B atom takes a variety of stable and metastable geometries depending on its charge state. We also find that atomic rearrangements during the diffusion manifest a wealth of bonding feasibility in SiO2 and that the calculated activation energy agrees with the experimental data available. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords:first-principle calculations;SiO2;atomic boron;energy barrier;diffusion path;boron penetration