Preferred crystal orientation and low electrical resistivity are required for ZrNx films applied in electronic devices. In this paper, effects of N-2:(N-2 + Ar) flow ratio (F(N-2)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N-2) (4-24%), the films show fee NaCl structure. While for F(N-2) in the ranges of 5-12, 12-24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N-2) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature. (C) 2003 Elsevier B.V. All rights reserved.