Compositionally graded combinatorial films have been characterized by a high throughput automated spectroscopic reflectometer. The data from this instrument were used to map the thickness and index of refraction of the compositionally varying films. Combinatorial films produced by dual-beam, dual-target pulsed laser deposition and characterized with the reflectometer include the BaTiO3-SrTiO3 system on silicon (dielectric and ferroelectric films). In addition, combinatorial Au/Ni electrical contacts on n-GaN/sapphire produced by electron-beam (e-beam) vaporization have been characterized with the spectroscopic reflectometer. The Au/Ni/n-GaN/sapphire structures were characterized both as-deposited and after annealing at 400 degreesC for 60 s in flowing argon. (C) 2003 Published by Elsevier B.V.