The epitaxial growth of Si and SiGe layers on (1 1 0) Si substrates using UHV-CVD is studied with comparing that on (10 0) substrates. It is revealed that, while the growth rate on (1 1 0) surfaces is quite lower than that on (1 0 0) surfaces, the Ge content of SiGe is the same between (1 0 0) and (1 1 0) surfaces, meaning that the ratio of decomposition yields of source molecules for Si and Ge are same in both the (1 0 0) and (1 1 0) substrates. This characteristic is expected to lead to the epitaxial growth of SiGe films with uniform Ge content over the three-dimensional patterned structure, which can be utilized for vertical FET and Fin-FETs. Actually, it has been experimentally confirmed that the SiGe films grown over trench structures has a uniform Ge content. (C) 2003 Elsevier B.V. All rights reserved.