Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 less than or equal to x less than or equal to 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150 degreesC for a-Si1-xGex with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (similar to500 degreesC) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates. (C) 2003 Elsevier B.V. All rights reserved.