High Ge fraction Si/Si1-xGex/Si heterostructures (x = 0.5) are processed into the super self-aligned ultrashallow junction electrode ((SE)-E-3) pMOSFETs. The ultrashallow junction is made from the selective epitaxial B-doped Si0.5Ge0.5 on source/drain grown by chemical vapor deposition (CVD) and subsequent thermal diffusion of B from B-Si0.5Ge0.5 into the substrate. The Ge fraction in the (SEMOSFETs)-E-3' buried layer changes to 0.35 after the B diffusion at 750 degreesC due to the interdiffusion between Si and Ge. The B diffusion depth in Si/SiGe/Si is shallower compared to that in Si. Compared to Si-channel (SEMOSFET)-E-3, the maximum linear transconductance of the 0.12 mum gate Si0.65Ge0.35-channel (SEMOSFET)-E-3 increases by approximately 45%. The threshold voltage shift and the S factor degradation in the short channel region are well suppressed compared to the Si-channel (SEMOSFETs)-E-3. It is suggested that the suppression of short channel effects is caused by the ultrashallow source/drain and the valence band discontinuity at the Si1-xGex/buffer Si interface. (C) 2003 Elsevier B.V. All rights reserved.