Applied Surface Science, Vol.224, No.1-4, 336-340, 2004
Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure
Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage. (C) 2003 Elsevier B.V. All rights reserved.