Ga drops on a Ge(1 1 1) surface have been investigated by scanning Auger electron spectroscopy. Surface segregation of both Ga on Ge, and of Ge on Ga, was observed at about 600 K. These results are found to be consistent with the various driving forces of surface segregation. Following ion sputtering of the Ge substrate at about 400 K, the Ga drops spontaneously move over the substrate. thereby healing sputter-induced damage at the Ge surface. (C) 2004 Elsevier B.V. All rights reserved.