A 545 nm thick low-k dielectric film was implanted at room temperature with 50 keV Cu-63(+) to a dose of 1.0 x 10(14) atoms/ cm(2). The film is a SiOx-based material and doped with about 8 at.% of flourine. Analyses by secondary-ion mass spectrometry show that Cu is fast diffuser in the low-k film, and after the RTA anneals Cu has redistributed within the film and some Cu has migrated to the interface between the low-k film and Si substrate. At 800 degreesC RTA, the apparent "diffusion" coefficient in the implanted film, D-A, is estimated as approximate to 1.5 x 10(-9) cm(2)/S. The 1100 degreesC RTA sample was re-analysed after stripping the low-k film and the result showed that 4.0 x 10(12) atom S/cm(2) Cu had moved into the silicon substrate to a depth of about 170 nm. (C) 2004 Elsevier B.V. All rights reserved.