The polarization anisotropy of the photoluminescence (PL) of InGaP films grown by liquid phase epitaxy (LPE) on GaAs substrates was studied. Photoluminescence measurements were performed in a wide temperature (4-250 K) range for emitted radiation polarized along the [0 1 1] and [0 (1) over bar 1] directions. Donor-acceptor transitions dominate at low temperature (4 K), while band-to-band transition does at higher temperature (250 K). A difference between the energy position of the spectral peaks for [0 1 1] and [0 (1) over bar 1] polarizations was found. This can be explained by the presence of compressive and tensile strained regions along the [0 1 1] direction. Moreover, the difference in the line shape of the spectra for different polarizations indicates the presence of anisotropy for these crystallographic directions. (C) 2004 Elsevier B.V. All rights reserved.